On the complemented subspaces of the Schreier spaces

It is shown that the Schreier space X admits a set of continuum cardinality whose elements are mutually incomparable complemented subspaces spanned by subsequences of the natural Schauder basis of X.Comment: 26 pages, AMS-LaTe

Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements

Injection-level dependent recombination lifetime measurements of iron-diffused, boron-doped silicon wafers of different resistivities are used to determine the electron and hole capture crosssections of the acceptor level of iron-boron pairs in silicon. The relative populations of iron-boron pairs and interstitial iron were varied by exposing the samples to different levels of illumination prior to lifetime measurements. The components of the effective lifetime due to interstitial iron and iron-boron pairs were then modeled with Shockley-Read-Hall statistics. By forcing the sum of the modeled iron-boron and interstitial iron concentrations to equal the implanted iron dose, in conjunction with the strong dependence of the shape of the lifetime curves on dopant density, the electron and hole capture cross-sections of the acceptor level of iron-boron pairs have been determined as (3±2)×10-14cm-2 and (2±1)×10-15cm-2

Effect of Field Direction on Electrowetting in a Nanopore

We manifest a significant influence of field direction and polarity on surface wetting, when the latter is tuned by application of an external electric field. Thermodynamics of field-induced filling of hydrocarbon-like nanopores with water is studied by open ensemble molecular simulation. Increased field strength consistently results in water-filling and electrostriction in hydrophobic nanopores. A threshold field commensurate with surface charge density of about one elementary charge per 10 nm2 suffices to render prototypical paraffin surfaces hydrophilic. When a field is applied in the direction perpendicular to the confining walls, the competition between orientational polarization and angle preferences of interfacial water molecules relative to the walls results in an asymmetric wettability of opposing surfaces (Janus interface). Reduction of surface free energy observed upon alignment of confinement walls with field direction suggests a novel mechanism whereby the applied electric field can operate selectively on water-filled nanotubes while empty ones remain unaffected

A probabilistic and information theoretic interpretation of quantum evolutions

In quantum mechanics, outcomes of measurements on a state have a probabilistic interpretation while the evolution of the state is treated deterministically. Here we show that one can also treat the evolution as being probabilistic in nature and one can measure `which unitary' happened. Likewise, one can give an information-theoretic interpretation to evolutions by defining the entropy of a completely positive map. This entropy gives the rate at which the informational content of the evolution can be compressed. One cannot compress this information and still have the evolution act on an unknown state, but we demonstrate a general scheme to do so probabilistically. This allows one to generalize super-dense coding to the sending of quantum information. One can also define the ``interaction-entanglement'' of a unitary, and concentrate this entanglement.Comment: 9 page

Silicon solar cell process development, fabrication and analysis

For UCP Si, randomly selected wafers and wafers cut from two specific ingots were studied. For the randomly selected wafers, a moderate gettering diffusion had little effect. Moreover, an efficiency up to 14% AMI was achieved with advanced processes. For the two specific UCP ingots, ingot #5848-13C displayed severe impurity effects as shown by lower 3sc in the middle of the ingot and low CFF in the top of the ingot. Also the middle portions of this ingot responded to a series of progressively more severe gettering diffusion. Unexplained was the fact that severely gettered samples of this ingot displayed a negative light biased effect on the minority carrier diffusion length while the nongettered or moderately gettered ones had the more conventional positive light biased effect on diffusion length. On the other hand, ingot C-4-21A did not have the problem of ingot 5848-13C and behaved like to the randomly selected wafers. The top half of the ingot was shown to be slightly superior to the bottom half, but moderate gettering helped to narrow the gap